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| STP11NM80 - STB11NM80 STF11NM80 - STW11NM80 N-CHANNEL 800V - 0.35 - 11A TO-220/FP/D2PAK/TO-247 MDmeshTMPower MOSFET TARGET DATA TYPE STP11NM80 STF11NM80 STB11NM80 STW11NM80 VDSS 800 800 800 800 V V V V RDS(on) < 0.40 < 0.40 < 0.40 < 0.40 Rds(on)*Qg 14 *nC 14 *nC 14 *nC 14 *nC ID 11 11 11 11 A A A A 3 3 1 2 1 TYPICAL RDS(on) = 0.35 LOW GATE INPUT RESISTANCE LOW INPUT CAPACITANCE AND GATE CHARGE BEST R ds(on) * Qg IN THE INDUSTRY TO-220 D2PAK 3 3 2 1 1 2 TO-220FP TO-247 DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The 800 V MDmeshTM family is very suitable for single switch applications in particular for Flyback and Forward converter topologies. ORDERING INFORMATION SALES TYPE STP11NM80 STF11NM80 STB11NM80T4 STW11NM80 MARKING P11NM80 F11NM80 B11NM80 W11NM80 PACKAGE TO-220 TO-220FP D2PAK TO-247 PACKAGING TUBE TUBE TAPE & REEL TUBE June 2003 1/10 STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-220/D2PAK TO-247 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 11 4.7 44 150 1.2 15 -65 to 150 800 800 30 11 (*) 4.7 (*) 44 (*) 35 0.28 TO-220FP V V V A A A W W/C V/ns C Unit ( )Pulse width limited by safe operating area (1)ISD<11A, di/dt<400A/s, VDD TO-220/D2PAK TO-247 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.83 62.5 300 TO-220FP 3.6 C/W C/W C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = 2.5A, VDD = 50 V) Max Value TBD TBD Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 A, VGS = 0 Min. 800 10 100 100 3 4 0.35 5 0.40 Typ. Max. Unit V A A nA V VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating, TC = 125 C Gate-body Leakage Current (VDS = 0) Static Drain-source On Resistance VGS = 30V Gate Threshold Voltage VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.5 A 2/10 STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80 ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 7.5 A VDS = 30 V, f = 1 MHz, VGS = 0 Min. Typ. 5 1900 1000 18 2 Max. Unit S pF pF pF (1)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 400 V, ID = 5.5 A RG = 4.7 , VGS = 10V (see test circuit, Figure 3) VDD = 400 V, ID = 11 A, VGS = 10 V Min. Typ. 27 14 40 10 24 58 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 640 V, ID = 11A, RG = 4.7 , VGS = 10V (see test circuit, Figure 5) Min. Typ. 6 11 21 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A, VGS = 0 ISD = 11 A, di/dt = 100A/s, VDD = 100V, Tj = 150C (see test circuit, Figure 5) 496 6.5 26 Test Conditions Min. Typ. Max. 11 44 1.5 Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/10 STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/10 STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80 TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q 5/10 STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80 TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 6/10 G STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80 D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 7/10 1 STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80 TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 8/10 STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80 D PAK FOOTPRINT 2 TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 9/10 STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 10/10 |
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